GERMANIUM - AN OVERVIEW

≤ 0.fifteen) is epitaxially grown on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, and after that the structure is cycled by way of oxidizing and annealing phases. A result of the preferential oxidation of Si above Ge [68], the original Si1–summary = "We assess the optical obtain of tensile-strained, n-type Ge substa